Qorvo says its new SiC FET product line has best-in-class figures of merit for on-resistance

Radio frequency technology company Qorvo (formerly UnitedSiC) has announced a new SiC Field Effect Transistor (FET) product line, which it says has best-in-class figures of merit for on-resistance. The FET is designed for the 800 V bus architectures in the onboard chargers of EVs as well as industrial battery chargers, industrial power supplies, DC/DC solar inverters, welding machines, uninterruptible power supplies and induction heating applications.

The UF4C/SC is a 1,200 V FET product line. “Expanding our 1,200 V range with higher-performance Gen 4 options allows us to better serve the engineers who are moving their bus designs to 800 V,” said Chief Engineer of Power Devices for UnitedSiC/Qorvo Anup Bhalla. “In electric vehicles, this move to higher voltages is inevitable and these new devices, with four different RDS(on) classes, help designers select the best possible SiC choice for every design.”

The new FETs are available in 23-, 30-, 53- and 70-milliohm RDS(on) versions. Each is housed in a 4-lead kelvin source TO-247 package, and the 53- and 70-milliohm versions are also available in a TO-247 3-lead package. The company says, “This series of parts have excellent reliability, based on their well-managed thermal performance, which is a result of an advanced silver-sinter die attach and advanced wafer-thinning process.”

The new line is included in the company’s FET-Jet Calculator online design tool, and all versions are currently available from authorized distributors.

Source: Qorvo